Diffusing dopants into a semiconductor wafer

Details Diffusing dopants into a semiconductor wafer Diffusing dopants into a semiconductor wafer

1992-03-02

1997-06-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

H01L 21223

Patent

active

056354223

ABSTRACT:
Dopants from a diffusion source (16) are diffused into a product wafer (14) to form a uniform doping concentration within the product wafer (14). The source (16) has a thermal conductivity that is approximately equal to a thermal conductivity of the wafer (14). The source (16) is positioned near the wafer (14) thereby forming a space (23) between the source (16) and the wafer (14). Gas flow (26) through the space (23) is limited to a predetermined value in order to prevent disturbing dopant diffusion. The source (16) is heated to a predetermined temperature, then the wafer (14) is heated. Subsequently, the wafer (14) and the source (16) are cooled at substantially equal rates.

REFERENCES:
patent: 4588455 (1986-05-01), Genser
Kim et al, "Formation of Shallow Phosphorus Layers by Rapid Thermal Processing Using a Solid Diffusion Source", Journal of the Korean Institute of Electrical Engineering, vol. 1, No. 2, pp.105-109, 1988.

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