Diffused drain transistor

Details Diffused drain transistor Diffused drain transistor

2002-12-23

2009-11-10

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257SE29268, C257SE29278

Reexamination Certificate

active

07615822

ABSTRACT:
A transistor has a source that includes a first impurity region with a first volume and a first surface area on a surface of the transistor. The transistor also has a drain that includes a second impurity region with a second volume and a second surface area on a surface of the transistor, a third impurity region with a third volume that overlaps and extends deeper than the second volume of the second impurity region, and a fourth impurity region with a fourth volume and a third surface area. The third surface area is located in the second surface area of the second impurity region. Additionally, the second and third impurity regions have a lower concentration of impurities than the fourth impurity region. The transistor also has a gate to control a depletion region between the source and the drain.

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