Diffused buried plate trench dram cell array

Details Diffused buried plate trench dram cell array Diffused buried plate trench dram cell array

1992-01-09

1993-11-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257311, 257390, 257544, 361313, H01L 27108, H01L 2976, H01L 2900, H01G 406

Patent

active

052647161

ABSTRACT:
A high density substrate plate DRAM cell memory device is described in which a buried plate region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by lateral outdiffusion from the sidewalls of the deep trenches and partially formed by an N-well surface diffusion which entirely surrounds the DRAM array region.

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