Differentially mis-aligned contacts in flash arrays to...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000

Reexamination Certificate

active

07032193

ABSTRACT:
A method and apparatus for calibrating failures in semiconductor memory devices due to contact mask misalignment includes: providing a plurality of semiconductor memory devices on a die; providing a contact mask with a plurality of known offsets; creating a plurality of contacts on the die using the contact mask; determining which devices on the die fail; and creating a pass/fail map for the devices. The pass/fail map can be used to determine the range of allowed misalignment and the amount of misalignment, providing a better understanding of how contact mask misalignment affects the yield and reliability of the memory devices. The pass/fail map may also be used for comparison with a pass/fail map created after the arrays have been subjected to a known stress.

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