Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-04-26
2005-04-26
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S185210, C365S196000, C365S207000, C365S210130
Reexamination Certificate
active
06885600
ABSTRACT:
A digital multilevel non-volatile memory includes a massive sensing system that includes a plurality of sense amplifiers disposed adjacent subarrays of memory cells. The sense amplifier includes a high speed load, a wide output range intermediate stage and a low impedance output driver. The high speed load provides high speed sensing. The wide output range provides a sensing margin at high speed on the comparison node. The low impedance output driver drives a heavy noisy load of a differential comparator. A precharge circuit coupled to the input and output of the sense amplifier increases the speed of sensing. A differential comparator has an architecture that includes analog bootstrap. A reference sense amplifier has the same architecture as the differential amplifier to reduce errors in offset. The reference differential amplifier also includes a signal multiplexing for detecting the contents of redundant cells and reference cells.
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Briner Michael Stephen
Frayer Jack Edward
Saiki William John
Tran Hieu Van
Gray Cary Ware & Freidenrich LLP
Nguyen Viet Q.
Silicon Storage Technology, Inc.
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