Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-05-31
2011-05-31
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
Reexamination Certificate
active
07952153
ABSTRACT:
At least one differential pressure sensing device has an active surface with an active region and a back surface with a recess. Next, a sacrificial layer is formed on a surface of the active region. Then, the differential pressure sensing device is bonded and electrically coupled with a surface of a carrier that has at least one through-hole corresponding to the recess of the differential pressure sensing device. Afterwards, at least one molding compound is formed to encapsulate the carrier and differential pressure sensing device while exposing the through-hole region and an upper surface of the sacrificial layer. Then, a solvent is used to naturally decompose the sacrificial layer, such that the active region of the differential pressure sensing device is exposed to atmosphere, thereby forming a differential pressure sensing device package with the through-hole.
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Chen Jung-Tai
Chu Chun-Hsun
Shieh Wen-Lo
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Nguyen Dao H
Nguyen Tram H
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