Differential poly-edge oxidation for stable SRAM cells

Details Differential poly-edge oxidation for stable SRAM cells Differential poly-edge oxidation for stable SRAM cells

1998-05-13

2000-02-15

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438595, 438635, H01L 2128, H01L 21336

Patent

active

060252537

ABSTRACT:
An SRAM cell having improved stability includes pass transistors having gate electrodes which are shaped by oxidation so that the lower edges of the gate electrodes are raised away from the substrate surface. Because the gate electrodes of the load and pull-down transistors are masked during the oxidation process, the gate electrodes of the load and pull-down transistors have the conventional rectangular shape. The modified shape of the gate electrodes of the pass transistors decreases the current flowing through the pass transistors relative to that which flows through the pull-down transistors, reducing the likelihood that data can inadvertently be lost from the SRAM cell.

REFERENCES:
patent: 4316256 (1982-02-01), Widman
patent: 4332078 (1982-06-01), Peek et al.
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4494301 (1985-01-01), Faraone
patent: 5021354 (1991-06-01), Pfiester et al.
patent: 5849611 (1998-12-01), Yamazaki et al.
patent: 5930659 (1999-07-01), Klein et al.

Affiliated with

Also associated with

Rating

Differential poly-edge oxidation for stable SRAM cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Differential poly-edge oxidation for stable SRAM cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Differential poly-edge oxidation for stable SRAM cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1905509