Differential mechanical stress-producing regions for...

Details Differential mechanical stress-producing regions for... Differential mechanical stress-producing regions for...

2007-12-11

2007-12-11

Warren, Matthew E. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C257S506000, C257SE29007, C257SE29020

Reexamination Certificate

active

11268131

ABSTRACT:
Integrated circuit field effect transistors include a substrate, an isolation region in the substrate that defines an active region in the substrate, spaced apart source/drain regions in the active region, a channel region in the active region between the spaced apart source/drain regions and an insulated gate on the channel region. A differential mechanical stress-producing region is configured to produce different mechanical stress in the channel region adjacent the isolation region compared to remote from the isolation region. The differential mechanical stress-producing region may be formed using patterned stress management films, patterned stress-changing implants and/or patterned silicide films, and can reduce undesired comer effects. Related fabrication methods also are described.

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