Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-01-29
1998-05-19
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
36518901, G11C 1300
Patent
active
057544778
ABSTRACT:
A flash memory cell. The flash memory cell includes first and second transistors. The first transistor has a control gate coupled to a word line, a drain coupled to a data line and a floating gate. The second transistor, similarly, includes a control gate coupled to the word line, a drain coupled to a second data line and a second floating gate. The first floating gate stores a state of the second transistor prior to programming of the flash memory cell. Further, the second floating gate stores a programmed state of the second transistor. A difference between the states of the first and second transistors represents the value of the data stored in the flash memory cell.
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Fears Terrell W.
Micro)n Technology, Inc.
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