Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2011-08-02
2011-08-02
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S002000, C216S039000, C216S046000, C216S067000, C438S791000, C438S792000, C118S724000
Reexamination Certificate
active
07988875
ABSTRACT:
A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
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Choi Soo Young
Furuta Gaku
Angadi Maki A
Applied Materials Inc.
Patterson & Sheridan L.L.P.
Vinh Lan
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