Differential arrangement magnetic memory cell

Static information storage and retrieval – Systems using particular element – Magnetoresistive

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365173, G11C 1115

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active

047516771

ABSTRACT:
A memory cell having a plurality of storage structures in a differential arrangement. Two multilayered magnetoresistive memory cells are placed in a bridge arrangement with two impedance devices. The memory cells have one bridge juncture in common. Switches are connected to at least two of the four bridge junctures to permit the writing or reading of the magnetic state of the storage cells. The bridge arrangement combined with the appropriate switching action allows for a near doubling of the magnitude of the output sense signal while reducing the noise component of such signal.

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