Differental current source for generating DRAM refresh signal

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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C365S211000

Reexamination Certificate

active

10386147

ABSTRACT:
A circuit for generating a refresh signal for a memory cell of a semiconductor memory includes a capacitor and a differential current source for providing a charging current to the capacitor. The differential current source includes a temperature-dependent and a temperature-independent current source connected such that the charging current is proportional to a difference between a temperature-dependent current and a temperature-independent current. A comparator a voltage at a capacitor terminal and a reference voltage. The comparator generates a refresh signal when capacitor voltage exceeds the reference voltage.

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