Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-02-20
2007-02-20
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S211000
Reexamination Certificate
active
10386147
ABSTRACT:
A circuit for generating a refresh signal for a memory cell of a semiconductor memory includes a capacitor and a differential current source for providing a charging current to the capacitor. The differential current source includes a temperature-dependent and a temperature-independent current source connected such that the charging current is proportional to a difference between a temperature-dependent current and a temperature-independent current. A comparator a voltage at a capacitor terminal and a reference voltage. The comparator generates a refresh signal when capacitor voltage exceeds the reference voltage.
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Schaefer Andre
Schnabel Joachim
Infineon - Technologies AG
Le Thong Q.
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