Dielectrics with improved leakage characteristics

Details Dielectrics with improved leakage characteristics Dielectrics with improved leakage characteristics

2006-04-04

2006-04-04

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S775000, C438S781000

Reexamination Certificate

active

07022626

ABSTRACT:
Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.

REFERENCES:
patent: 6420739 (2002-07-01), Yokoi
patent: 6525365 (2003-02-01), Basceri et al.
patent: 2002/0094593 (2002-07-01), Chiou et al.
patent: 2002/0130377 (2002-09-01), Khare et al.
patent: 2003/0190780 (2003-10-01), Buchanan et al.
patent: 2003/0211718 (2003-11-01), Koyama et al.

Affiliated with

Also associated with

Rating

Dielectrics with improved leakage characteristics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectrics with improved leakage characteristics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectrics with improved leakage characteristics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3545468