Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Patent
1994-01-27
1995-01-10
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
257374, 257396, 257397, 257510, 257513, H01L 2934, H01L 2702, H01L 2906, H01L 2940
Patent
active
053810333
ABSTRACT:
A dielectrics dividing wafer is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wafer. The semiconductor areas can be used for vertical circuit elements. The partition dielectric films in conjunction with the embedded dielectric films and the face surface of the wafer also define additional planar semiconductor areas that can be used for planar structure circuit elements.
REFERENCES:
patent: 3343255 (1967-09-01), Donovan
patent: 3534234 (1970-10-01), Clevenger
patent: 3648125 (1972-03-01), Peltzer
patent: 3966577 (1976-06-01), Hochberg
patent: 3970486 (1976-07-01), Kooi
patent: 3979765 (1976-09-01), Brand
patent: 4862240 (1989-08-01), Watanabe et al.
IEEE 1987 Custom Integrated Circuits Conference, "Dielectrically Isolated Intelligent Power Switch", Yu Ohata and Takao Izumita, pp. 443-446.
Fuji Electric Company Ltd.
James Andrew J.
Jr. Carl Whitehead
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