Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-11
1998-10-20
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257520, 257524, H01L 21782, H01L 2974
Patent
active
058250670
ABSTRACT:
A semiconductor IC comprising a supporting substrate; a first buried insulator film formed partially on the supporting substrate; a second buried insulator film thinner than the first buried insulator film formed partially on the supporting substrate; a plurality of island-shaped semiconductor layers formed on the first and second buried insulator films, respectively; and dielectric isolation regions formed between the plurality of island-shaped semiconductor layers. A surge protection circuit is formed in the island-shaped semiconductor layer formed on the second buried insulator film and also an internal circuit is formed in other island-shaped semiconductor layers formed on the first buried insulator film. Surface wirings are disposed to interconnect the surge protection circuit and the internal circuit.
REFERENCES:
patent: 4985745 (1991-01-01), Kitahara et al.
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5670799 (1997-09-01), Croft
Endo Koichi
Takeuchi Yoshinori
Kabushiki Kaisha Toshiba
Monin Donald
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