Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-13
2007-02-13
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S639000
Reexamination Certificate
active
10379061
ABSTRACT:
A polymer dielectric material includes a sidewall passivating layer on the opposing sidewall surfaces of an opening in the dielectric layer for a via or trench. The sidewall passivating layer may be deposited on the sidewall surfaces, as well as the bottom surface of an opening having a first depth in the polymer dielectric layer. After the sidewall passivating layer is added, the depth of the opening may be increased to a second depth. The sidewall passivating layer provides a barrier to removal of the polymer dielectric from the sidewalls, preventing or reducing undercutting below a hard mask.
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Intel Corporation
Lindsay Jr. Walter L.
Trop Pruner & Hu P.C.
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