Dielectric with sidewall passivating layer

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S639000

Reexamination Certificate

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10379061

ABSTRACT:
A polymer dielectric material includes a sidewall passivating layer on the opposing sidewall surfaces of an opening in the dielectric layer for a via or trench. The sidewall passivating layer may be deposited on the sidewall surfaces, as well as the bottom surface of an opening having a first depth in the polymer dielectric layer. After the sidewall passivating layer is added, the depth of the opening may be increased to a second depth. The sidewall passivating layer provides a barrier to removal of the polymer dielectric from the sidewalls, preventing or reducing undercutting below a hard mask.

REFERENCES:
patent: 6025259 (2000-02-01), Yu et al.
patent: 6303489 (2001-10-01), Bass
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6372634 (2002-04-01), Qiao et al.
patent: 6410424 (2002-06-01), Tsai et al.
patent: 6458691 (2002-10-01), Subramanian et al.
patent: 2002/0173142 (2002-11-01), Vanhaelemeersch et al.
patent: 2002/0173143 (2002-11-01), Lee et al.

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