Dielectric thin film device with lead erbium zirconate titanate

Details Dielectric thin film device with lead erbium zirconate titanate Dielectric thin film device with lead erbium zirconate titanate

1994-06-22

1996-11-26

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257301, 257310, 257417, 257418, 257443, 423593, 365 65, 365117, 365145, 359248, 7351416, 7351421, 7351434, 7351436, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

055788459

ABSTRACT:
A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0<x<1 and 0<y<1. This dielectric thin film element has excellent electric characteristics of a leak electric current and fatigue characteristics, etc. The dielectric thin film element may have a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 and a platinum upper electrode. These films and electrodes are sequentially formed on an n-type silicon substrate. In this case, 0.45.ltoreq.x.ltoreq.0.75 and 0.05.ltoreq.y.ltoreq.0.1 are set. A method for manufacturing a dielectric thin film has the steps of coating a substrate with a precursor solution of erbium lead zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 drying the coated solution at a high temperature to obtain a dry gel; and thermally treating the dry gel at a higher temperature to produce the dielectric thin film is constructed of the lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0.45.ltoreq.x.ltoreq.0.8 and 0.005.ltoreq.y.ltoreq.0.1.

REFERENCES:
patent: 5112433 (1992-05-01), Dawson et al.
Hirano et al., Third Euro-Ceramics, "Processing of Better . . . ," vol. 2, pp. 685-698, Sep. 12, 1993, Faenza Editrice Iberica, Spain.
M. N. Kamalasanan et al., "Dielectric and ferroelectric properties . . . ," J. Appl. Phys. 74(9), Nov. 1, 1993, pp. 5679-5686.
Reza Moazzami et al., IEEE Transactions on Electron Devices, vol. 39, No. 9, pp. 2044-2049 (Sep., 1992).
R. E. Jones et al., Appl. Phys. Lett. 60(8), pp. 1022-1024 (Feb. 24, 1992).

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