Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-07-30
2000-03-14
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419222, 20419226, C23C 1434
Patent
active
060368233
ABSTRACT:
A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.
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Fujikawa Hisayoshi
Hattori Tadashi
Hattori Yutaka
Inoguchi Kazuhiro
Ito Nobuei
Denso Corporation
Mercado Julian A.
Nguyen Nam
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