Dielectric thin film and fabrication method thereof

Compositions: ceramic – Ceramic compositions – Titanate – zirconate – stannate – niobate – or tantalate or...

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501139, C04B 35468, C04B 3547

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active

058743790

ABSTRACT:
An improved dielectric thin film and a capacitor with the same for a semiconductor and a fabrication method thereof capable of preventing leakage current in operation, which dielectric thin film includes (Ba, Sr)TiO.sub.3 containing Ta, and which the capacitor includes a substrate; an interlayer insulation layer formed on a substrate, thereby exposing a predetermined portion of the substrate to the outside; a lower electrode formed on a predetermined portion of the interlayer insulation layer including the exposed portion of the substrate; a dielectric thin film consisting of (Ba, Sr)TiO.sub.3 containing Ta and formed on the interlayer insulation film including the lower electrode; and an upper electrode formed on the dielectric thin film.

REFERENCES:
patent: 3033907 (1962-05-01), Rue
patent: 3819990 (1974-06-01), Hayashi et al.
patent: 4642732 (1987-02-01), Ikeda et al.
patent: 4957888 (1990-09-01), Brand et al.
patent: 4987107 (1991-01-01), Narumi et al.
patent: 5051864 (1991-09-01), Chazono et al.
patent: 5086021 (1992-02-01), Sasaki et al.
patent: 5314651 (1994-05-01), Kulwicki
patent: 5441670 (1995-08-01), Shimamune et al.

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