Method of producing a semiconductor light emitting device dispos

Details Method of producing a semiconductor light emitting device dispos Method of producing a semiconductor light emitting device dispos

1992-11-30

1994-01-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 90, 437905, 148DIG50, H01L 2118

Patent

active

052759687

ABSTRACT:
A semiconductor light emitting device includes a vertical aperture produced at a main surface of a semi-insulating or insulating substrate, a transverse aperture provided in the substrate communicating with the vertical aperture, a conducting semiconductor layer buried in the vertical aperture and the transverse aperture, a groove produced by etching the substrate from the surface thereof until reaching the conducting semiconductor layer at a portion of the transverse aperture, and a light emitting element produced in the groove, and the light emitting region of the element being buried in the groove and connected with the buried conducting semiconductor layer. Accordingly, no pn junction exists at the periphery of the light emitting region, and a semiconductor light emitting element of quite low parasitic capacitance is obtained at high yield. A planar structure in which two electrodes are produced at the same plane is obtained, resulting in ease of integration and enhancement of the integration density.

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