Dielectric structures having embedded gap filling RIE etch stop

Details Dielectric structures having embedded gap filling RIE etch stop Dielectric structures having embedded gap filling RIE etch stop

1993-06-30

1996-10-15

Dean, Ralph H.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Mixing of two or more solid polymers; mixing of solid...

427307, C08L 8300

Patent

active

055655297

ABSTRACT:
Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.

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