Dielectric structures having embedded gap filling RIE etch stop

Details Dielectric structures having embedded gap filling RIE etch stop Dielectric structures having embedded gap filling RIE etch stop

1989-06-13

1992-08-25

Cashion, Jr., Merrell C.

Stock material or miscellaneous articles

Composite

Of silicon containing

4284735, 428689, 428901, 528 10, 528 26, 528 27, 528 28, 528 37, B32B 904

Patent

active

051418177

ABSTRACT:
Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.

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John Wiley & Sons, Editor: M. Grayson, D. Eckroth "Polyimides". Encyclopedia of Chemical Technology Third Edition pp. 704-719.

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