Dielectric structure in nonvolatile memory device and method...

Details Dielectric structure in nonvolatile memory device and method... Dielectric structure in nonvolatile memory device and method...

2010-03-29

2011-11-01

Trinh, Hoa B (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S029000

Reexamination Certificate

active

08049268

ABSTRACT:
A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

REFERENCES:
patent: 6660660 (2003-12-01), Haukka et al.
patent: 7465626 (2008-12-01), Chen et al.

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