Dielectric nanostructure and method for its manufacture

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S584000, C438S781000, C257SE21001, C257SE21062, C977S700000

Reexamination Certificate

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07569469

ABSTRACT:
The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer.

REFERENCES:
patent: 6399666 (2002-06-01), Hawker
patent: 6905955 (2005-06-01), Basceri
patent: 6930034 (2005-08-01), Colburn et al.
patent: 7056840 (2006-06-01), Miller et al.
patent: 7341788 (2008-03-01), Cha
patent: 2003/0185741 (2003-10-01), Matyjaszewski
patent: 2003/0207595 (2003-11-01), Ralamasu et al.
patent: 2004/0152293 (2004-08-01), Basceri et al.
patent: 2004/0232552 (2004-11-01), Wang et al.
patent: 2005/0079719 (2005-04-01), Colburn et al.
patent: 2005/0116346 (2005-06-01), Kirner et al.
patent: 2007/0023870 (2007-02-01), Dubois et al.
Freer et. al. Oriented Mesoporous Organosilicate Thin Films Nano Letters vol. 5, No. 10 2014-2018 (2005).

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