Dielectric medium for capacitor of semiconductor device

Details Dielectric medium for capacitor of semiconductor device Dielectric medium for capacitor of semiconductor device

1991-01-03

1992-06-23

Carroll, J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 60, 361321, H01L 2702, H01L 2904

Patent

active

051247771

ABSTRACT:
A dielectric medium for the capacitor of a semiconductor device is disclosed. The dielectric material is prepared by replacing Sr and Ba in (Sr, Ba)Nb.sub.2 O.sub.6 with La, and the replacement is carried out by adding 2 mole % or more of La.sub.2 O.sub.3 to (Sr,Ba)Nb.sub.2 O.sub.6, thereby forming a composition (Sr.sub.x Ba.sub.1-x).sub.1-(3/2)y La.sub.y Nb.sub.2 O.sub.6 (0.25.ltoreq.x.ltoreq.0.5, 0.04.ltoreq.y). According to the present invention, the dielectric medium has the characteristics that the crystal structure is not affected even over the Curie temperature, and that a high dielectric constant and a low dielectric loss coefficient are maintained.

REFERENCES:
patent: 4403236 (1983-09-01), Mandai et al.
patent: 4631633 (1986-12-01), Shaulov et al.
S. I. Lee et al., "A Photoacoustic Study of Phase Transition in Modified Strontium Barium Niobate Ceramics", Ferroelectrics, (1990), vol. 107, pp. 355-359.
W. K. Choo et al., "A HREM Study of La and Li-Modified Strontium Barium Niobate Ceramics", Ferroelectrics, (1990), vol. 107, pp. 299-304.
S. I. Lee et al., "Modified Ferroelectric High Density Strontium Barium Niobate Ceramics for Pyroelectric Applications", Ferroelectrics, (1988), vol. 87, pp. 209-212.

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