Dielectric materials of amorphous compositions of TI-O.sub.2 dop

Details Dielectric materials of amorphous compositions of TI-O.sub.2 dop Dielectric materials of amorphous compositions of TI-O.sub.2 dop

1998-06-04

2000-07-25

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 27108

Patent

active

060939443

ABSTRACT:
A dielectric film useful for a capacitor in a DRAM device comprises an amorphous composition of Ti.sub.1-y M.sub.y O.sub.x, where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a lanthanide rare earth element and advantageously, selected from the group of neodymium (Nd), terbium (Tb) and dysprosium (Dy). The concentration of dopants in the a-TiO.sub.2 film is preferably from 5 to 50 at. % and more preferably from 10 to 30 at. %. The inventive dielectric materials have a high dielectric constant of greater than 30 and figure of merit of greater than 9.0 .mu.C/cm.sup.2.

REFERENCES:
patent: 5340607 (1994-08-01), Friz et al.
patent: 5585300 (1996-12-01), Summerfelt
patent: 5989626 (1999-11-01), Coombs et al.
patent: 6025291 (2000-02-01), Murakawa
Gartner, M., et al., Spectroellipsometric characterization of lanthanide-doped TiO2 films . . ., Thin Solid Films, 234 (1993) 561-5.

Affiliated with

Also associated with

Rating

Dielectric materials of amorphous compositions of TI-O.sub.2 dop does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric materials of amorphous compositions of TI-O.sub.2 dop, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric materials of amorphous compositions of TI-O.sub.2 dop will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338326