Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1992-12-07
1994-05-31
Niebling, John
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
204167, 42218607, C23C 1400
Patent
active
053166396
ABSTRACT:
This invention concerns a SiO.sub.2, SiN.sub.x protection film formed by a CVD or PVD gas phase glowing method capable of preventing melting of the matrix ingredients at the surface of a dielectric material in electric discharge of an ozone generator and it relates to a dielectric material used for an ozone generator capable of overcoming the problems for the abrasion of electrode and dielectric material or melting of ions or molecules of during electric discharge, as well as a method of forming a protection film therefor based on the finding that an SiO.sub.2 film or SiN.sub.x film can be formed easily on a surface of a predetermined electric material or, further, on a surface of electrode by processing a specific reaction gas, for example, comprising a crude gas such as SiH.sub.4, SiCl.sub.4, N.sub.2, NH.sub.3 or TEOS or further incorporated with an inert gas or like by means of an atmospheric CVD process such as CVD or heat CVD and, in particular, on the finding that the protection film can be disposed directly to the surface of the dielectric material and the electrode in an ozone generator after the completion of assembling.
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Hirakawa Masahiro
Kogoma Masuhiro
Okazaki Sachiko
Kogoma Masuhiro
Mayekar Kishor
Niebling John
Okazaki Sachiko
Sumitomo Precision Products Co. Ltd.
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