Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S510000, C257SE27112
Reexamination Certificate
active
07982266
ABSTRACT:
A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.
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Search Report in EP 07004591.9-1235/1863081, dated Jun. 10, 2010; (9 pages).
Honda Mitsutoshi
Ishitsuka Norio
Ito Masahiro
Kamioka Hidekazu
Kurita Shinichi
Antonelli, Terry Stout & Kraus, LLP.
Crawford Latanya
Hitachi , Ltd.
Landau Matthew C
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