Dielectric material and process to create same

Details Dielectric material and process to create same Dielectric material and process to create same

1995-02-27

1997-11-11

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257321, 257410, 257411, 257764, 257770, 257649, 437236, 437237, 437913, 437919, 437983, H01L 27108, H01L 2102

Patent

active

056867484

ABSTRACT:
An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.

REFERENCES:
patent: 4690730 (1987-09-01), Tang et al.
patent: 4949162 (1990-08-01), Tamaki et al.

Affiliated with

Also associated with

Rating

Dielectric material and process to create same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric material and process to create same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric material and process to create same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1231405