Dielectric material

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S758000, C257S760000, C257SE23119, C257SE23131

Reexamination Certificate

active

07485964

ABSTRACT:
A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

REFERENCES:
patent: 4716073 (1987-12-01), Randa
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5422377 (1995-06-01), Aubert
patent: 5548159 (1996-08-01), Jeng
patent: 5908510 (1999-06-01), McCullough et al.
patent: 5965679 (1999-10-01), Godschalx et al.
patent: 5965934 (1999-10-01), Cheung et al.
patent: 6008540 (1999-12-01), Lu et al.
patent: 6077792 (2000-06-01), Farrar
patent: 6083565 (2000-07-01), Carbonell et al.
patent: 6159842 (2000-12-01), Chang et al.
patent: 6218497 (2001-04-01), Hacker et al.
patent: 6284810 (2001-09-01), Burnham et al.
patent: 6413827 (2002-07-01), Farrar
patent: 6432811 (2002-08-01), Wong
patent: 6479391 (2002-11-01), Morrow et al.
patent: 6486078 (2002-11-01), Rangarajan et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6562732 (2003-05-01), Besling et al.
patent: 6612317 (2003-09-01), Costantini et al.
patent: 6764873 (2004-07-01), Hichri et al.
patent: 6858089 (2005-02-01), Castrucci
patent: 6875687 (2005-04-01), Weidman et al.
Batchelder et al.Solid State Technology, 29,32 and 34 (Mar. 1999).

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