Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-06
2010-12-28
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S622000, C257SE21576
Reexamination Certificate
active
07858532
ABSTRACT:
A method for fabricating a dielectric layer structure includes providing a substrate, forming at least a low-k dielectric layer on the substrate, forming a single tensile layer on the low-k dielectric layer, and performing a moisture preventing treatment on the single tensile film. The single tensile layer possesses a stress comparative to a stress of the low-k dielectric layer and a hydrophobic characteristic that prevents itself from absorbing moisture.
REFERENCES:
patent: 5366929 (1994-11-01), Cleeves et al.
patent: 5387546 (1995-02-01), Maeda et al.
patent: 6010943 (2000-01-01), Liao
patent: 6015759 (2000-01-01), Khan et al.
patent: 6294473 (2001-09-01), Oliver
patent: 6297532 (2001-10-01), Yamamoto et al.
patent: 6548901 (2003-04-01), Cote et al.
patent: 7381451 (2008-06-01), Lang et al.
patent: 2006/0043591 (2006-03-01), Yim et al.
patent: 2007/0105297 (2007-05-01), Jeong et al.
patent: 2007/0114667 (2007-05-01), Bhatt et al.
patent: 2007/0281497 (2007-12-01), Liu et al.
patent: 2008/0020570 (2008-01-01), Naik
patent: 2008/0122045 (2008-05-01), Yang et al.
patent: 2008/0197513 (2008-08-01), Restaino et al.
Kohl et al. “Low k, Porous Methyl Silsesquioxane and Spin-On-Glass.” Electrochemical and Solid-State Letters vol. 2 (1999): p. 77-79.
Fan Michele
Hsu Winston
Margo Scott
Smith Matthew S
United Microelectronics Corp.
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