Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-02-28
2010-11-23
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C257SE21282
Reexamination Certificate
active
07838438
ABSTRACT:
A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.
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Korean Office Action dated May 3, 2007 issued in KR 2005-85209.
Chung Eun Ae
Im Ki Vin
Kim Young Sun
Lee Jong Cheol
Yeo Jae Hyun
Coleman W. David
Kim Sun M
Samsung Electronics Co,. Ltd
Stanzione & Kim LLP
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