Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2005-01-25
2005-01-25
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S795000, C257SE21241, C257SE21252, C257SE21274
Reexamination Certificate
active
06846757
ABSTRACT:
A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity. A method of producing such a semiconductor device includes depositing a dielectric layer over a substrate and treating the dielectric layer in a hydrogen containing plasma such that the dielectric layer exhibits an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity.
REFERENCES:
patent: 3223040 (1965-12-01), Dinkelkamp
patent: 4096315 (1978-06-01), Kubacki
patent: 4793524 (1988-12-01), Starr
patent: 4822632 (1989-04-01), Williams et al.
patent: 4894254 (1990-01-01), Nakayama et al.
patent: 5095938 (1992-03-01), Garrison
patent: 5098741 (1992-03-01), Nolet et al.
patent: 5195655 (1993-03-01), Bukhman
patent: 5270267 (1993-12-01), Ouellet
patent: 5273851 (1993-12-01), Takei et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5356034 (1994-10-01), Schlumberger
patent: 5494712 (1996-02-01), Hu et al.
patent: 5534069 (1996-07-01), Kuwabara et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5620524 (1997-04-01), Fan et al.
patent: 5641559 (1997-06-01), Namiki
patent: 5723368 (1998-03-01), Cho et al.
patent: 5730804 (1998-03-01), Gomi et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5876503 (1999-03-01), Roeder et al.
patent: 6303094 (2001-10-01), Kusunoki et al.
patent: 6713234 (2004-03-01), Sandhu et al.
patent: 20030031789 (2003-02-01), Bedwell et al.
patent: 19654 737 (1996-12-01), None
patent: 0 212 691 (1987-03-01), None
patent: 0159079 (1992-12-01), None
patent: 0 519 079 (1992-12-01), None
patent: 0 529 334 (1993-03-01), None
patent: 0 726 599 (1996-08-01), None
patent: 0 761 841 (1997-03-01), None
patent: 0 254 205 (1998-01-01), None
patent: 0 826 791 (1998-03-01), None
patent: 2 108 133 (1983-05-01), None
patent: 2 111 064 (1983-06-01), None
patent: 2 220 869 (1990-01-01), None
patent: 2 280 169 (1995-01-01), None
patent: WO 9401885 (1994-01-01), None
patent: WO 9629576 (1996-09-01), None
patent: WO 9808249 (1998-02-01), None
patent: WO 9823787 (1998-06-01), None
patent: WO 9943866 (1999-09-01), None
patent: WO 0051174 (2000-08-01), None
patent: WO 0101472 (2001-01-01), None
EPO, Patent Abstracts of Japan, Publication No. 10310866, Publication Date Nov. 24, 1998, Kamiya Kazuo.
A. Grill et al., “Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane,” Journal of Applied Physics, Volumn 85, No. 6, Mar. 15, 1999, pp. 3314-3318.
Ghyka Alexander
Trikon Holdings Limited
Volentine & Francos, PLLC
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