Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2004-06-28
2010-10-26
McDonald, Rodney G (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192230, C204S192160
Reexamination Certificate
active
07820017
ABSTRACT:
The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.
REFERENCES:
patent: 3932690 (1976-01-01), Gliemeroth
patent: 4488780 (1984-12-01), Nicholson
patent: 4654067 (1987-03-01), Ramus et al.
patent: 4691077 (1987-09-01), Gregory et al.
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4927246 (1990-05-01), Ito
patent: 5187496 (1993-02-01), Yu
patent: 5239406 (1993-08-01), Lynam
patent: 5454919 (1995-10-01), Hill et al.
patent: 5532062 (1996-07-01), Miyazaki et al.
patent: 5548475 (1996-08-01), Ushikubo et al.
patent: 5569362 (1996-10-01), Lerbet et al.
patent: 5770321 (1998-06-01), Hartig et al.
patent: 5962080 (1999-10-01), Tan et al.
patent: 5981076 (1999-11-01), Ojeda
patent: 6002208 (1999-12-01), Maishev et al.
patent: 6033471 (2000-03-01), Nakanishi et al.
patent: 6086727 (2000-07-01), Pinarbasi
patent: 6190511 (2001-02-01), Wei
patent: 6284360 (2001-09-01), Johnson et al.
patent: 6316110 (2001-11-01), Anzaki et al.
patent: 6500676 (2002-12-01), Ramberg
patent: 6503636 (2003-01-01), Le Masson et al.
patent: 6596399 (2003-07-01), Veerasamy
patent: 6809066 (2004-10-01), Reade et al.
patent: 2002/0086164 (2002-07-01), Anzaki et al.
patent: 2002/0110934 (2002-08-01), Uchiyama et al.
patent: 2002/0139772 (2002-10-01), Fenner
patent: 2003/0064198 (2003-04-01), Scott et al.
patent: 2005/0002081 (2005-01-01), Beteille et al.
patent: 702 812 (1968-02-01), None
patent: 0 353 141 (1990-01-01), None
patent: 0 363 045 (1990-04-01), None
patent: 601 928 (1994-06-01), None
patent: 0601928 (1994-06-01), None
patent: 0 753 438 (1997-01-01), None
patent: 2 227 123 (1974-11-01), None
patent: 2 829 723 (2003-03-01), None
patent: 1 202 719 (1970-08-01), None
patent: 3 115 142 (1991-05-01), None
patent: WO 99/45415 (1999-09-01), None
patent: 02/46491 (2002-06-01), None
S. Mitaray, et al., “Preparation De Couches Minces De Ag2O Et Action De Certains Gaz Sur Celles-CI”, Thin Solid Films, vol. 46, No. 2, pp. 201-208, Oct. 17, 1977.
U.S. Appl. No. 10/562,121, filed Dec. 23, 2005, Baubet, et al.
U.S. Appl. No. 10/564,501, filed Jan. 13, 2006, Giron, et al.
U.S. Appl. No. 10/563,322, filed Jan. 4, 2006, Giron, et al.
“Handbook of Sputter Deposition Technology”.
Baubet Carole
Fischer Klaus
Giron Jean Christophe
Hofrichter Alfred
Jansen Manfred
McDonald Rodney G
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Saint-Gobain Glass France
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