Dielectric isolation process using double wafer bonding

Details Dielectric isolation process using double wafer bonding Dielectric isolation process using double wafer bonding

1987-06-29

1989-07-25

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156645, 156648, 437 62, 437 84, 437225, H01L 2120, H01L 21302

Patent

active

048510785

ABSTRACT:
A method of forming a high quality dielectrically isolated silicon on insulator semiconductor device using a double wafer bonding process. As a result of the double wafer bonding process, the invention significantly reduces the device limitations presently known with dielectric isolation and silicon on insulator structures. The present invention specifically eliminates the need for grinding or polishing the final surface which the devices will be implemented in, thereby eliminating the adverse effects which these mechanical processes impute onto these surfaces. Additionally, the present invention eliminates the need for a thick polycrystalline deposition for the production of the dielectric isolation, thereby eliminating the adverse effects of single crystal bulk defects and the loss of tolerance control due to warpage which would otherwise occur in a dielectric isolated process. Also as a result of the double bonding process, tighter tolerances and more precisely positioned final islands are achieved, thereby allowing for more densely packed or smaller circuits for a given application.

REFERENCES:
patent: 4501060 (1985-02-01), Frye et al.
patent: 4601779 (1986-07-01), Abernathey et al.

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