Dielectric interface for group III-V semiconductor device

Details Dielectric interface for group III-V semiconductor device Dielectric interface for group III-V semiconductor device

2005-11-30

2009-02-03

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S172000, C257S183000, C257S310000, C257SE31019, C257SE31033

Reexamination Certificate

active

07485503

ABSTRACT:
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

REFERENCES:
patent: 4751201 (1988-06-01), Nottenburg et al.
patent: 4871692 (1989-10-01), Lee et al.
patent: 4914059 (1990-04-01), Nissim et al.
patent: 2003/0080332 (2003-05-01), Phillips
patent: 2005/0062082 (2005-03-01), Bucher et al.
patent: 2006/0148182 (2006-07-01), Datta et al.
patent: 0 265 314 (1988-04-01), None
patent: 0 469 604 (1992-02-01), None
patent: 0 474 952 (1992-03-01), None
patent: 05 090252 (1993-04-01), None
patent: 06 132521 (1994-05-01), None
patent: WO 91/06976 (1991-05-01), None
K.Y. Park et al. Device Characteristics of AlGaN/GaN MIS-HFET Using Al2O3-HfO3 Laminated High-k Dielectric, Japan.Jourm of Appl.Phys. vol. 43, 2004, pp. L1433-L1435.
H.W.Jang et al. “Incorporation of Oxygen Donors in AlGaN”, J.Electrochem Soc. 152, pp. G536-G540, (2004).
Bednyi, et al “Electronic State of the Surface of INP Modified by Treatment in Sulfur Vapor,” Soviet Physics Semiconductors, Am. Inst. of Physics, New York, vol. 26, No. 8, Aug. 1, 1992.
Datta, et al “85nm Gate Length Enhancement and Depletion Mode InSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital logic Applications,” IEEE Dec. 5, 2005, pp. 763-766.
Ashley, et al “InSb-based Quantum Well Transistors for High Speed, Low Power Applications,” QinetiQ, Malvern Technology Center and Intel (2004) 2 pages.
Park K-Y, et al “Device Characteristics of AlGaN/GaN MIS-HFET Using Al2O3-HfO2Laminated High-k Dielectric,” Japanese Jnl of Applied Physics, vol. 32, No. 11A (2004) 3 pages.
PCT Search Report, PCT/US2006/044601, mailing date Mar. 19, 2007, 7 pages.

Affiliated with

Also associated with

Rating

Dielectric interface for group III-V semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric interface for group III-V semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric interface for group III-V semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4066992