Dielectric element including oxide-based dielectric film and...

Details Dielectric element including oxide-based dielectric film and... Dielectric element including oxide-based dielectric film and...

2005-05-03

2005-05-03

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C438S396000, C438S399000

Reexamination Certificate

active

06888189

ABSTRACT:
A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.

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Japanese Office Action for Application No. JP 2000-340045 and English Translation dated Nov. 11, 2004.

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