Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-04-20
2011-10-25
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
08043968
ABSTRACT:
Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
REFERENCES:
patent: 5926740 (1999-07-01), Forbes et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6528423 (2003-03-01), Catabay et al.
patent: 6759327 (2004-07-01), Xia et al.
patent: 6764958 (2004-07-01), Nemani et al.
patent: 2003/0042613 (2003-03-01), Shioya et al.
patent: 2003/0134495 (2003-07-01), Gates et al.
patent: 2004/0005775 (2004-01-01), Chou et al.
patent: 2004/0124532 (2004-07-01), Harada
patent: 2004/0140289 (2004-07-01), Su et al.
Office Action dated Mar. 31, 2009 from U.S. Appl. No. 11/736,402.
Office Action dated Oct. 2, 2009 from U.S. Appl. No. 11/736,402.
Notice of Allowance dated Feb. 1, 2010 from U.S. Appl. No. 11/736,402.
Burke Peter A.
Catabay Wilbur G.
Cui Hao
Beyer Law Group LLP
Booth Richard A.
LSI Logic Corporation
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