Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-08-24
1997-04-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257537, 257760, 257904, H01L 2711
Patent
active
056169515
ABSTRACT:
A method of for manufacture of a semiconductor device on a semiconductor substrate including an SRAM cell with a resistor comprises formation of a first polysilicon layer on the semiconductor substrate, patterning and etching the first polysilicon layer, formation of an interpolysilicon layer over the first polysilicon layer, patterning and etching an opening through the interpolysilicon layer exposing a contact area on the surface of the first polysilicon layer, forming a dielectric load resistor in the opening upon the contact area on the first polysilicon layer, and formation of a second polysilicon layer on the device over the dielectric load resistor, over the interpolysilicon layer.
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Crane Sara W.
Hardy David B.
Jones II Graham S.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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