Dielectric apparatus and associated methods

Details Dielectric apparatus and associated methods Dielectric apparatus and associated methods

2007-04-16

2009-12-22

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C257SE21001

Reexamination Certificate

active

07635634

ABSTRACT:
In an embodiment of the invention, an amorphous phase dielectric material is selectively formed over a substrate. The amorphous phase dielectric material is then converted into a crystalline phase dielectric material.

REFERENCES:
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patent: 2005/0110152 (2005-05-01), Wang et al.
patent: 2006/0040510 (2006-02-01), Lee et al.
patent: 2006/0199399 (2006-09-01), Muscat
patent: 2006/0228868 (2006-10-01), Ahn et al.
patent: 2006/0246737 (2006-11-01), Yim et al.
patent: 2006/0261397 (2006-11-01), Ahn et al.
patent: 2007/0037405 (2007-02-01), Kim et al.
D. Triyoso et al., “Impact od Deposition and Annealing Temperature on Material and Electrical Chracteristics of ALD HfO2”, 2004, Journal of Electrochemical Society, vol. 151, No. 10, pp. F220-F227.
S.A. Campbell, “The Science and Engineering of Microelectronic Fabrication”, 2001, Oxford University Press, pp. 138-140.
C. C. Finstad and A.J. Muscat, “Atomic Layer Deposition of Silicon Nitride Barrier Layer for Self-Alligned Gate Stack”, 2003, Electrochemical Society Proceedings, vol. 2003-26, pp. 88-89.

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