Die-wafer package and method of fabricating same

Details Die-wafer package and method of fabricating same Die-wafer package and method of fabricating same

2008-08-19

2010-10-05

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S108000, C257S686000, C257S777000, C257S778000, C257SE27137, C257SE27144, C257SE27161

Reexamination Certificate

active

07807503

ABSTRACT:
A die-wafer package includes a singulated semiconductor die having a first plurality of bond pads on a first surface and a second plurality of bond pads on a second, opposing surface thereof. Each of the first and second pluralities of bond pads includes an under-bump metallization (UBM) layer. The singulated semiconductor die is disposed on a semiconductor die site of a semiconductor wafer and a first plurality of conductive bumps electrically couples the first plurality of bond pads of the singulated semiconductor die with a first set of bond pads formed on the semiconductor die site. A second plurality of conductive bumps is disposed on a second set of bond pads of the semiconductor die site. A third plurality of conductive bumps is disposed on the singulated semiconductor die's second plurality of bond pads. The second and third pluralities of conductive bumps are configured for electrical interconnection with an external device.

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