Die thermal sensor suitable for auto self refresh,...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S189070, C365S222000, C365S225700

Reexamination Certificate

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07936616

ABSTRACT:
A semiconductor memory device includes a reference voltage generator for generating a plurality of reference voltages each having different voltage levels in response to a self refresh enable control signal, and a voltage comparator for generating a result signal that controls a self refresh operation cycle by comparing each of the plurality of reference voltages with a temperature information voltage that represents an internal temperature of an integrated circuit.

REFERENCES:
patent: 2005/0276134 (2005-12-01), Mori et al.
patent: 2006/0098509 (2006-05-01), Kim
patent: 2007/0036015 (2007-02-01), Sako
patent: 2007/0126471 (2007-06-01), Jeong
patent: 2008/0056044 (2008-03-01), Tomita
patent: 2008/0144415 (2008-06-01), Macerola et al.
patent: 2005-222574 (2005-08-01), None
patent: 1020060028094 (2006-03-01), None
patent: 1020060118733 (2006-11-01), None
patent: 1020070036642 (2007-04-01), None
Intel® DDR3 Specification, Rev. 0.8.7, Apr. 6, 2006.
Proposed (Apr. 24, 2008 JESD79-3 RevC ballot).

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