Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S723000, C257S738000, C257S786000
Reexamination Certificate
active
07915690
ABSTRACT:
A die rearrangement package structure is provided, which includes a die that having an active surface and a bottom surface, and a plurality of pads is disposed on the active surface; a package body is provided to cover a die and the active surface being exposed; a polymer material with at least one slit is provided to cover the active surface and the pads is exposed from said slits; one ends of a plurality of metal traces is electrically connected to each pads; a protective layer is provided to cover the active surface of the dies and each metal traces, and the other ends of the metal traces being exposed; a plurality of connecting elements is electrically connected other ends of the metal traces, the characterized in that: the package body is a B-stage material.
REFERENCES:
patent: 7196408 (2007-03-01), Yang et al.
patent: 2005/0124093 (2005-06-01), Yang et al.
Brewster William M.
ChipMos Technologies (Bermuda) Ltd
ChipMos Technologies Inc
Chow Ming
Sinorica LLC
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