Die bonding agent and a semiconductor device made by using...

Details Die bonding agent and a semiconductor device made by using... Die bonding agent and a semiconductor device made by using...

2011-03-08

2011-03-08

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C257S782000, C257S783000, C257SE23040

Reexamination Certificate

active

07901992

ABSTRACT:
A die bonding agent comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, the die bonding agent having a viscosity ratio, V1/V2, ranging(i) from 1.5 to 4 at a temperature of from room temperature to 50° C., and(ii) from 0.5 to less than 1.5 at a temperature at which the die bonding agent hardens in 0.5 hour to 1.5 hours, the viscosities being measured in 10 minutes after the die bonding agent is placed on a sample stage of a Brook Field viscometer, wherein V1is a viscosity measured by stirring 0.5 ml of the die bonding agent with a No. 51 spindle at 0.5 rpm and V2is a viscosity measured by stirring 0.5 ml of the die bonding agent with a No. 51 spindle at 5 rpm in the Brook Field viscometer.

REFERENCES:
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patent: 5889332 (1999-03-01), Lawson et al.
patent: 6445076 (2002-09-01), Shimizu et al.
patent: 2007/0026572 (2007-02-01), Hatakeyama et al.
patent: 2007/0290369 (2007-12-01), Hasegawa et al.
patent: 2005303275 (2005-10-01), None
patent: 2006-005159 (2006-01-01), None
patent: WO-99/60622 (1999-11-01), None

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