Diamond wafer and method of producing a diamond wafer

Details Diamond wafer and method of producing a diamond wafer Diamond wafer and method of producing a diamond wafer

1997-11-21

2000-04-18

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117105, 117929, 423446, 427559, C30B 2904

Patent

active

060510633

ABSTRACT:
A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

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