Diamond shaped gate mesh for cellular MOS transistor array

Details Diamond shaped gate mesh for cellular MOS transistor array Diamond shaped gate mesh for cellular MOS transistor array

1993-11-19

1994-10-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257758, 257776, 257342, H01L 2910, H01L 2978, H01L 2348

Patent

active

053550080

ABSTRACT:
A cellular transistor structure is disclosed which incorporates a polysilicon gate mesh. In one embodiment, the silicon under the polysilicon is of an N-type while the exposed area not covered by the polysilicon is doped with a P dopant to form P-type source and drain regions. Metal strips are used to contact the rows of source and drain cells. By forming the openings in the polysilicon mesh to be in a diamond shape (i.e., having a long diagonal and a short diagonal), the source and drain metal strips, arranged in the direction of the short diagonals, can be made wider and shorter, thus reducing the on-resistance of the transistor without increasing the area of the transistor.

REFERENCES:
patent: 4833521 (1989-05-01), Early

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