Diamond-like carbon for use in VLSI and ULSI interconnect system

Details Diamond-like carbon for use in VLSI and ULSI interconnect system Diamond-like carbon for use in VLSI and ULSI interconnect system

1996-04-12

1997-10-21

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

216 81, 216 79, 1566431, 257 77, H01L 2100, H01L 310312

Patent

active

056792697

ABSTRACT:
The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

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