Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-06-07
1996-10-29
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427573, 427249, 427122, 216 81, 428408, 423446, B05D 306, H05H 124
Patent
active
055695019
ABSTRACT:
The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
REFERENCES:
patent: 4486286 (1984-12-01), Lewin et al.
patent: 4603082 (1986-07-01), Zelez
patent: 4663183 (1987-05-01), Ovshinsky et al.
patent: 4698256 (1987-10-01), Giglia et al.
patent: 4717622 (1988-01-01), Kurokawa et al.
patent: 4728529 (1988-03-01), Etzkorn et al.
patent: 4777090 (1988-10-01), Ovshinsky et al.
patent: 4783361 (1988-11-01), Ovishinsky et al.
patent: 4783368 (1988-11-01), Yamamoto et al.
patent: 4849290 (1989-07-01), Fujimori et al.
patent: 4900628 (1990-02-01), Ikegaya et al.
patent: 4915977 (1990-04-01), Okamoto et al.
patent: 4935303 (1990-06-01), Ikoma et al.
patent: 4961958 (1990-10-01), Desphandey et al.
patent: 5190807 (1993-03-01), Kimock et al.
patent: 5358754 (1994-10-01), Kobashi et al.
Aisenberg, et al., "Ion-Beam Deposition of Thin Films of Diamondlike Carbon", Journal of Appl. Phys., 42, pp. 2953-2958 (1971).
Callegari, et al., "Properties of SiO.sub.2 /Si/GaAs Structures Formed by Solid Phase Epitaxy of Amorphous Si on GaAs", Appl. Phys. Lett., 58, pp. 2540-2542 (1991).
Collins, "The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?", Mat. Res. Soc. Symp. Proc., 162, pp. 3-13 (1990).
Grill et al., "Diamondlike Carbon Films by a Plasma-Assisted Chemical Vapor Deposition from Acetylene", IBM J. Res. Develop., 34, pp. 849-857 (1990).
Batey, et al., "Plasma-Enhanced CVD of High Quality Insulating Films", Appl. Surface Sci., 39, pp. 1-15 (1989).
Yamagami, et al., "A New Anti-Reflective Layer for Deep UV Lithography", Microlithograph, Paper 1674-29, Session 8.
Grill, et al., "Optical and Tribiological Properties of Heat-Treated Diamondlike Carbon", J. Mater. Res., 5, pp. 2531-2537 (1990).
Grill, "Inhomogeneous Carbon Bonding in Hydrogenated Amorphous Carbon Films", J. Appl. Phys., 61, pp. 2874-2877 (1987).
Liou, et al., "Low-Temperature Diamond Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition", Appl. Phys. Lett., 55, pp. 631-633 (1989).
Williams, et al., "Characterization of Diamond Thin Films: Diamond Phase Identification, Surface Morphology, and Defect Structures", J. Mater. Res., 4, pp. 373-384 (1989).
Ma, et al., "Selective Nucleation and Growth of Diamond Particles by Plasma-Assisted Chemical Vapor Deposition", Appl. Phys. Lett., 53, pp. 1071-1073 (1988).
Matsumoto, et al., "Chemical Vapor Deposition of Diamond from Methane-Hydrogen Gas", Proc. 7th ICVM, pp. 386-391 (1982).
Bailey Fredric D.
Buchanan Douglas A.
Callegari Alessandro C.
Clearfield Howard M.
Doany Fuad E.
International Business Machines - Corporation
King Roy V.
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