Diamond field-effect transistor with a particular boron distribu

Details Diamond field-effect transistor with a particular boron distribu Diamond field-effect transistor with a particular boron distribu

1991-08-14

1993-10-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257607, 257611, 257412, 257192, H01L 310132, H01L 29167, H01L 29207, H01L 2976

Patent

active

052548627

ABSTRACT:
An insulated gate field-effect transistor including an active diamond layer having a desired boron doping concentration profile. The boron doping concentration profile generally decreases with increasing depth into the diamond layer so that the active channel has a doping sufficient for field-effect transistor operation. An insulated gate electrode is formed on the highly doped surface and provides a low gate leakage current and passivates the surface of the diamond layer.

REFERENCES:
patent: 5002899 (1991-03-01), Geis et al.
patent: 5107315 (1992-04-01), Kumagai et al.
"Field Effect Transistors Using Boron-doped Diamond Epitaxial Films"; Shiomi et al--Nov. 8, 1989-pp. TP L2153-L2154.
"Ohmic Contacts to Semiconductor Diamond", Moazed et al-, IEEE electron device letters, vol. 9; Jul. 1988.
Fountain et al., "IGFET Fabrication on Homoepitaxial Diamond Using In Situ Boron and Lithium Doping", presented at the Electrochemical Society Meeting held in Washington, D.C. in May 1991.
Prins, "Preparation of Ohmic Contacts to Semiconducting Diamond", Schonland Research Centre, University of the Witwatersrand, Johannesburg 2050, pp. 1562-1564, Jul. 5, 1989.
Braunstein et al., "Effective p-type Doping of Diamond by Boron Ion Implantation", J. Appl. Phys. 54 (4), pp. 2106-2108, Apr. 1983.
Gildenblat et al., "High-Temperature Thin-Film Diamond Field-Effect Transistor Fabricated Using a Selective Growth Method", IEEE Electron Device Letters, vol. 12, No. 2, pp. 37-39, Feb. 1991.
Moazed et al., "A Thermally Active Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond", J. Appl. Phys. 68 (5), pp. 2246-2254, Sep. 1, 1990.
Hewett et al., "Fabrication of an Insulated Gate Diamond FET for High Temperature Applications", pp. 168-173, presented at the International High Temperature Electronics Conference in Albuquerque, New Mexico in Jun. of 1991.
Tsai et al., "Diamond MESFET Using Ultrashallow RTP Boron Doping", IEEE Electron Device Letters, vol. 12, No. 4, pp. 157-159, Apr. 1991.
Shiomi et al., "Characterization of Boron-Doped Diamond Epitaxial Films and Applications for High-Voltage Schottky Diodes and MESFET's ", New Diamond Science and Technology, pp. 975-980, 1991 MRS Int. Conf. Proc.

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