Diagonal deep well region for routing body-bias voltage for...

Details Diagonal deep well region for routing body-bias voltage for... Diagonal deep well region for routing body-bias voltage for...

2005-08-30

2005-08-30

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S369000, C257S372000, C257S373000, C257S210000, C257S206000, C257S403000, C257S374000, C257S296000, C257S355000, C257S299000, C257S544000, C257S216000, C257S349000, C257S536000, C438S200000, C438S284000, C438S286000

Reexamination Certificate

active

06936898

ABSTRACT:
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.

REFERENCES:
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patent: 6087892 (2000-07-01), Burr
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patent: 6218708 (2001-04-01), Burr
patent: 6303444 (2001-10-01), Burr
patent: 6489224 (2002-12-01), Burr
patent: 6617656 (2003-09-01), Lee et al.
patent: 6677643 (2004-01-01), Iwamoto et al.
patent: 2001/0028577 (2001-10-01), Sung et al.
patent: 0624909 (1994-11-01), None

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